High throughput processing system for chemical treatment and thermal treatment and method of operating

ABSTRACT

A high throughput processing system having a chemical treatment system and a thermal treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in the chemical treatment system.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of and claims the benefit of priorityunder 35 USC §121 from U.S. patent application Ser. No. 12/183,828,filed Jul. 31, 2008; the entire content of which is herein incorporatedby reference. This application is also related to pending U.S. patentapplication Ser. No. 11/682,625, entitled “PROCESSING SYSTEM AND METHODFOR PERFORMING HIGH THROUGHPUT NON-PLASMA PROCESSING” (ES-099), filed onMar. 6, 2007; co-pending U.S. patent application Ser. No. 12/183,597,entitled “HEATER ASSEMBLY FOR HIGH THROUGHPUT CHEMICAL TREATMENT SYSTEM”(ES-135), filed on Jul. 31, 2008, and issued as U.S. Pat. No. 8,115,140;co-pending U.S. patent application Ser. No. 12/183,650, entitled “HIGHTHROUGHPUT CHEMICAL TREATMENT SYSTEM AND METHOD OF OPERATING” (ES-147),and filed on Jul. 31, 2008; co-pending U.S. patent application Ser. No.12/183,694, entitled “SUBSTRATE HOLDER FOR HIGH THROUGHPUT CHEMICALTREATMENT SYSTEM” (ES-148), filed on Jul. 31, 2008, and issued as U.S.Pat. No. 8,287,688; and co-pending U.S. patent application Ser. No.12/183,763, entitled “HIGH THROUGHPUT THERMAL TREATMENT SYSTEM ANDMETHOD OF OPERATING” (ES-149), and filed on Jul. 31, 2008. The entirecontents of these applications are herein incorporated by reference intheir entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to a processing system and, more particularly, toa high throughput processing system for chemical treatment and thermaltreatment.

2. Description of Related Art

In material processing methodologies, various processes are utilized toremove material from the surface of a substrate, including for instanceetching processes, cleaning processes, etc. During pattern etching, finefeatures, such as trenches, vias, contact vias, etc., are formed in thesurface layers of the substrate. For example, pattern etching comprisesthe application of a thin layer of radiation-sensitive material, such asphoto-resist, to an upper surface of a substrate. A pattern is formed inthe layer of radiation-sensitive material using a lithographictechnique, and this pattern is transferred to the underlying layersusing a dry etching process or series of dry etching processes.

Additionally, multi-layer masks, comprising a layer ofradiation-sensitive material and one or more soft mask layers and/orhard mask layers, may be implemented for etching features in the thinfilm. For example, when etching features in the thin film using a hardmask, the mask pattern in the radiation-sensitive layer is transferredto the hard mask layer using a separate etch step preceding the mainetch step for the thin film. The hard mask may, for example, be selectedfrom several materials for silicon processing including silicon dioxide(SiO₂), silicon nitride (Si₃N₄), and carbon. Furthermore, in order toreduce the feature size formed in the thin film, the hard mask layer maybe trimmed laterally. Thereafter, one or more of the mask layers and/orany residue accumulated on the substrate during processing may beremoved using a dry cleaning process before or after the patterntransfer to the underlying layers. One or more of the pattern forming,trimming, etching, or cleaning process steps may utilize a dry,non-plasma process for removing material from the substrate. Forexample, the dry, non-plasma process may comprise a chemical removalprocess that includes a two-step process involving a chemical treatmentof the exposed surfaces of the substrate in order to alter the surfacechemistry of these exposed surface layers, and a post treatment of thechemically altered exposed surfaces in order to desorb the alteredsurface chemistry. Although the chemical removal process exhibits veryhigh selectivity for the removal of one material relative to anothermaterial, this process suffers from low throughput thus making theprocess less practical.

Etch processing is normally performed using a single substrateprocessing cluster tool, comprising a substrate transfer station, one ormore process modules, and a substrate handling system configured to loadand unload a single substrate into and out of each of the one or moreprocess modules. The single substrate configuration allows one substrateto be processed per chamber in a manner that provides consistent andrepeatable process characteristics both within-substrate and fromsubstrate-to-substrate. While the cluster tool provides thecharacteristics necessary for processing various features on asubstrate, it would be an advance in the art of semiconductor processingto increase the throughput of a process module while providing necessaryprocess characteristics.

SUMMARY OF THE INVENTION

The invention relates to a processing system and, more particularly, toa high throughput processing system for chemical treatment and thermaltreatment.

Furthermore, the invention relates to high throughput processing systemhaving a chemical treatment system and a thermal treatment system forprocessing a plurality of substrates. The chemical treatment system isconfigured to chemically treat a plurality of substrates in a dry,non-plasma environment. The thermal treatment system is configured tothermally treat a plurality of substrates chemically treated in thechemical treatment system.

According to an embodiment, a processing system for chemically treatinga plurality of substrates is described, comprising: a chemical treatmentsystem comprising a chemical treatment chamber, a temperature controlledsubstrate holder mounted within the chemical treatment chamber andconfigured to support two or more substrates on a support surfacethereof, a gas injection assembly coupled to the chemical treatmentchamber and configured to introduce one or more process gases to aprocess space in the chemical treatment chamber in order to chemicallyalter exposed surface layers on the two or more substrates, a heaterassembly coupled to the gas injection assembly and configured to elevatea temperature of the gas injection assembly, and a vacuum pumping systemcoupled to the chemical treatment chamber; a thermal treatment systemcomprising a thermal treatment chamber, one or more temperaturecontrolled substrate holders mounted within the thermal treatmentchamber and configured to support two or more substrates, wherein theone or more temperature controlled substrate holders include a mechanismto elevate a thermal treatment substrate temperature of the two or moresubstrates in order to thermally treat the chemically altered exposedsurfaces layers thereon, a substrate lifter assembly coupled to thethermal treatment chamber for vertically translating the two or moresubstrates between a transfer plane and the one or more temperaturecontrolled substrate holders, and a vacuum pumping system coupled to thethermal treatment chamber and configured to evacuate gaseous products ofthe thermal treatment; and an isolation assembly coupled to the chemicaltreatment system and the thermal treatment system, wherein the isolationassembly comprises a dedicated substrate handler configured to transferthe two or more substrates into and out of the chemical treatment systemand the thermal treatment system.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 illustrates a side view schematic representation of a transfersystem for a first treatment system and a second treatment systemaccording to an embodiment;

FIG. 2 illustrates a top view schematic representation of the transfersystem depicted in FIG. 1;

FIG. 3 illustrates a side view schematic representation of a transfersystem for a first treatment system and a second treatment systemaccording to another embodiment;

FIG. 4 illustrates a top view schematic representation of a transfersystem for a first treatment system and a second treatment systemaccording to another embodiment;

FIG. 5 illustrates a cross-sectional side view of a chemical treatmentsystem according to an embodiment;

FIG. 6 provides an exploded view of the cross-sectional side view of thechemical treatment system depicted in FIG. 5;

FIG. 7A provides a top view of a substrate holder according to anembodiment;

FIG. 7B provides a side view of the substrate holder depicted in FIG.7A;

FIG. 7C illustrates a top view layout of a substrate holder and apumping system in a chemical treatment system according to anembodiment;

FIG. 7D provides a top view of a substrate holder according to anotherembodiment;

FIG. 8A provides a top view of a lift pin assembly according to anembodiment;

FIG. 8B provides a side view of the lift pin assembly depicted in FIG.8A;

FIG. 8C provides an exploded view of a lift pin alignment device in asubstrate holder according to an embodiment;

FIG. 9 provides a cross-sectional view of a heater assembly according toan embodiment;

FIG. 10A provides a top view of a heater assembly according to anembodiment;

FIG. 10B provides a side view of the heater assembly depicted in FIG.10A;

FIGS. 11A and 11B illustrate a cross-sectional side view of a thermaltreatment system according to an embodiment;

FIG. 12 provides a top view of a substrate lifting assembly according toan embodiment;

FIG. 13 provides a top view of a substrate lifting assembly according toanother embodiment;

FIG. 14 provides a method of operating a chemical treatment system and athermal treatment system according to an embodiment;

FIG. 15 provides exemplary data for an etch rate using a dry, non-plasmaprocess; and

FIG. 16 provides a method of etching a substrate using a dry, non-plasmaetching process according to an embodiment.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

An apparatus and method for performing high throughput non-plasmaprocessing is disclosed in various embodiments. However, one skilled inthe relevant art will recognize that the various embodiments may bepracticed without one or more of the specific details, or with otherreplacement and/or additional methods, materials, or components. Inother instances, well-known structures, materials, or operations are notshown or described in detail to avoid obscuring aspects of variousembodiments of the invention. Similarly, for purposes of explanation,specific numbers, materials, and configurations are set forth in orderto provide a thorough understanding of the invention. Nevertheless, theinvention may be practiced without specific details. Furthermore, it isunderstood that the various embodiments shown in the figures areillustrative representations and are not necessarily drawn to scale.

Reference throughout this specification to “one embodiment” or “anembodiment” or variation thereof means that a particular feature,structure, material, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention, butdo not denote that they are present in every embodiment. Thus, theappearances of the phrases such as “in one embodiment” or “in anembodiment” in various places throughout this specification are notnecessarily referring to the same embodiment of the invention.Furthermore, the particular features, structures, materials, orcharacteristics may be combined in any suitable manner in one or moreembodiments. Various additional layers and/or structures may be includedand/or described features may be omitted in other embodiments.

Various operations will be described as multiple discrete operations inturn, in a manner that is most helpful in understanding the invention.However, the order of description should not be construed as to implythat these operations are necessarily order dependent. In particular,these operations need not be performed in the order of presentation.Operations described may be performed in a different order than thedescribed embodiment. Various additional operations may be performedand/or described operations may be omitted in additional embodiments.

There is a general need for a system and method for high-throughputtreatment of a plurality of substrates, and to a system and method forhigh-throughput chemical and thermal treatment of a plurality ofsubstrates. By using a plurality of substrate holders and a dedicatedhandler per station, the chemical and thermal treatment throughput of aplurality of substrates may be improved.

According to one embodiment, FIG. 1 presents a side-view of a processingplatform 100 for processing a plurality of substrates. For example, theprocess may include a dry, non-plasma etching process or a dry,non-plasma cleaning process. For example, the process may be used totrim a mask layer, or remove residue and other contaminants fromsurfaces of the substrate. Furthermore, for example, the process mayinclude a chemical oxide removal process.

The processing platform 100 comprises a first treatment system 110 and asecond treatment system 120 coupled to the first treatment system 110.In one embodiment, the first treatment system 110 is a chemicaltreatment system, and the second treatment system 120 is a thermaltreatment system. In another embodiment, the second treatment system 120is a substrate rinsing system, such as a water rinsing system. Also, asillustrated in FIG. 1, a transfer system 130 is coupled to the firsttreatment system 110 to transfer a plurality of substrates in and out ofthe first treatment system 110 and the second treatment system 120, andalso to exchange a plurality of substrates with a multi-elementmanufacturing system 140. The multi-element manufacturing system maycomprise a load-lock element to allow cassettes of substrates to cyclebetween ambient conditions and low pressure conditions.

The first and second treatment systems 110, 120, and the transfer system130 can, for example, comprise a processing element within themulti-element manufacturing system 140. The transfer system 130 maycomprise a dedicated handler 160 for moving a plurality of substratesbetween the first treatment system 110, the second treatment system 120and the multi-element manufacturing system 140. For example, thededicated handler 160 is dedicated to transferring the plurality ofsubstrates between the treatment systems (first treatment system 110 andsecond treatment system 120) and the multi-element manufacturing system140, however the embodiment is not so limited.

In one embodiment, the multi-element manufacturing system 140 may permitthe transfer of substrates to and from processing elements includingsuch devices as etch systems, deposition systems, coating systems,patterning systems, metrology systems, etc. In order to isolate theprocesses occurring in the first and second systems, an isolationassembly 150 is utilized to couple each system. For instance, theisolation assembly 150 may comprise at least one of a thermal insulationassembly to provide thermal isolation and a gate valve assembly toprovide vacuum isolation. Of course, treatment systems 110 and 120, andtransfer system 130 may be placed in any sequence.

FIG. 2 presents a top-view of the processing platform 100 illustrated inFIG. 1 for processing a plurality of substrates. In this embodiment, asubstrate 142A is processed side-by-side with another substrate 142B inthe same treatment system. In an alternative embodiment, not shown, thesubstrates 142A, 142B may be processed front-to-back, though theembodiment is not so limited. Although only two substrates are shown ineach treatment system in FIG. 2, two or more substrates may be processedin parallel in each treatment system.

Referring still to FIG. 2, the processing platform 100 may comprise afirst process element 102 and a second process element 104 configured toextend from the multi-element manufacturing system 140 and work inparallel with one another. As illustrated in FIGS. 1 and 2, the firstprocess element 102 may comprise first treatment system 110 and secondtreatment system 120, wherein a transfer system 130 utilizes thededicated substrate handler 160 to move substrate 142 into and out ofthe first process element 102.

Alternatively, FIG. 3 presents a side-view of a processing platform 200for processing a plurality of substrates according to anotherembodiment. For example, the process may include a dry, non-plasmaetching process or a dry, non-plasma cleaning process. For example, theprocess may be used to trim a mask layer, or remove residue and othercontaminants from surfaces of the substrate. Furthermore, for example,the process may include a chemical oxide removal process.

The processing platform 200 comprises a first treatment system 210, anda second treatment system 220, wherein the first treatment system 210 isstacked atop the second treatment system 220 in a vertical direction asshown. For example, the first treatment system 210 is a chemicaltreatment system, and the second treatment system 220 is a thermaltreatment system. Alternately, the second treatment system 220 is asubstrate rinsing system, such as a water rinsing system. Also, asillustrated in FIG. 3, a transfer system 230 may be coupled to the firsttreatment system 210, in order to transfer substrates into and out ofthe first treatment system 210, and coupled to the second treatmentsystem 220, in order to transfer substrates into and out of the secondtreatment system 220. The transfer system 230 may comprise a dedicatedhandler 260 for moving a plurality of substrates between the firsttreatment system 210, the second treatment system 220 and themulti-element manufacturing system 240. The handler 260 may be dedicatedto transferring the substrates between the treatment systems (firsttreatment system 210 and second treatment system 220) and themulti-element manufacturing system 240, however the embodiment is not solimited.

Additionally, transfer system 230 may exchange substrates with one ormore substrate cassettes (not shown). Although only two process systemsare illustrated in FIG. 3, other process systems can access transfersystem 230 or multi-element manufacturing system 240 including suchdevices as etch systems, deposition systems, coating systems, patterningsystems, metrology systems, etc. An isolation assembly 250 can be usedto couple each system in order to isolate the processes occurring in thefirst and second treatment systems. For instance, the isolation assembly250 may comprise at least one of a thermal insulation assembly toprovide thermal isolation, and a gate valve assembly to provide vacuumisolation. Additionally, for example, the transfer system 230 can serveas part of the isolation assembly 250.

In general, at least one of the first treatment system 110 and thesecond treatment system 120 of the processing platform 100 depicted inFIG. 1 comprises at least two transfer openings to permit passage of theplurality of substrates. For example, as depicted in FIG. 1, the secondtreatment system 120 comprises two transfer openings, the first transferopening permits the passage of the substrates between the firsttreatment system 110 and the second treatment system 120 and the secondtransfer opening permits the passage of the substrates between thetransfer system 130 and the second treatment system 120. However,regarding the processing platform 100 depicted in FIG. 1 and FIG. 2, andthe processing platform 200 depicted in FIG. 3, each treatment system,respectively, comprises at least one transfer opening to permit passageof the plurality of substrates.

According to another embodiment, FIG. 4 presents a top view of aprocessing platform 300 for processing a plurality of substrates. Forexample, the process may include a dry, non-plasma etching process or adry, non-plasma cleaning process. For example, the process may be usedto trim a mask layer, or remove residue and other contaminants fromsurfaces of the substrate. Furthermore, for example, the process mayinclude a chemical oxide removal process.

The processing platform 300 comprises a first treatment system 310, asecond treatment system 320, and an optional auxiliary treatment system370 coupled to a first transfer system 330 and an optional secondtransfer system 330′. In one embodiment, the first treatment system 310is a chemical treatment system, and the second treatment system 320 is athermal treatment system. In another embodiment, the second treatmentsystem 320 is a substrate rinsing system, such as a water rinsingsystem. Also, as illustrated in FIG. 4, the first transfer system 330and the optional second transfer system 330′ are coupled to the firsttreatment system 310 and the second treatment system 320, and configuredto transfer a plurality of substrates in and out of the first treatmentsystem 310 and the second treatment system 320, and also to exchange aplurality of substrates with a multi-element manufacturing system 340.The multi-element manufacturing system 340 may comprise a load-lockelement to allow cassettes of substrates to cycle between ambientconditions and low pressure conditions.

The first and second treatment systems 310, 320, and the first andoptional second transfer systems 330, 330′ can, for example, comprise aprocessing element within the multi-element manufacturing system 340.The transfer system 330 may comprise a first dedicated handler 360 andthe optional second transfer system 330′ comprises an optional seconddedicated handler 360′ for moving a plurality of substrates between thefirst treatment system 310, the second treatment system 320, theoptional auxiliary treatment system 370 and the multi-elementmanufacturing system 340.

In one embodiment, the multi-element manufacturing system 340 may permitthe transfer of substrates to and from processing elements includingsuch devices as etch systems, deposition systems, coating systems,patterning systems, metrology systems, etc. Furthermore, themulti-element manufacturing system 340 may permit the transfer ofsubstrates to and from the auxiliary treatment system 370, wherein theauxiliary treatment system 370 may include an etch system, a depositionsystem, a coating system, a patterning system, a metrology system, etc.

In order to isolate the processes occurring in the first and secondsystems, an isolation assembly 350 is utilized to couple each system.For instance, the isolation assembly 350 may comprise at least one of athermal insulation assembly to provide thermal isolation and a gatevalve assembly to provide vacuum isolation. Of course, treatment systems310 and 320, and transfer systems 330 and 330′ may be placed in anysequence.

As illustrated in FIG. 4, in this embodiment, two or more substrates 342can be processed side-by-side in the same treatment system. In analternative embodiment, not shown, the substrates 342 may be processedfront-to-back, though the embodiment is not so limited. Although onlytwo substrates are shown in each treatment system in FIG. 4, two or moresubstrates may be processed in parallel in each treatment system.

Referring to FIGS. 5, 11A and 11B, a processing platform, as describedabove, may comprise a chemical treatment system 500 for chemicallytreating a plurality of substrates and a thermal treatment system 1000for thermally treating the plurality of substrates. For example, theprocessing platform comprises chemical treatment system 500 and thermaltreatment system 1000 coupled to the chemical treatment system 500. Thechemical treatment system 500 comprises a chemical treatment chamber510, which can be temperature-controlled. The thermal treatment system1000 comprises a thermal treatment chamber 1010, which can betemperature-controlled. The chemical treatment chamber 510 and thethermal treatment chamber 1010 can be thermally insulated from oneanother using a thermal insulation assembly, and vacuum isolated fromone another using a gate valve assembly, to be described in greaterdetail below.

As illustrated in FIG. 5, the chemical treatment system 500 furthercomprises a temperature-controlled substrate holder 540 mounted withinthe chemical treatment chamber 510 and configured to support two or moresubstrates 545 on a support surface thereof, an upper assembly 520coupled to an upper section of the chemical treatment chamber 510, and avacuum pumping system 580 coupled to the chemical treatment chamber 510to evacuate the chemical treatment chamber 510.

The upper assembly 520 comprises a gas injection assembly 550 coupled tothe chemical treatment chamber 510 and configured to introduce one ormore process gases to a process space 512 in the chemical treatmentchamber 510 in order to chemically alter exposed surface layers on thetwo or more substrates 545. Additionally, the upper assembly 520comprises a heater assembly 530 coupled to the gas injection assembly550 and configured to elevate a temperature of the gas injectionassembly 550.

The chemical treatment chamber 510 comprises an opening 514 throughwhich the plurality of substrates 545 may be transported into and out ofthe chemical treatment chamber 510. Opening 514 in chemical treatmentchamber 510 may define a common passage with opening 1016 in thermaltreatment chamber 1010 through which the plurality of substrates 545 canbe transferred between chemical treatment chamber 510 and thermaltreatment chamber 1010.

During processing, the common passage can be sealed closed using a gatevalve assembly 518 in order to permit independent processing in the twochambers 510, 1010. As shown in FIG. 5, the gate valve assembly 518 mayinclude a drive system 516, such as a pneumatic drive system.Furthermore, a transfer opening 1014 can be formed in the thermaltreatment chamber 1010 in order to permit substrate exchanges with atransfer system as illustrated in FIGS. 1 through 4. For example, asecond thermal insulation assembly (not shown) may be implemented tothermally insulate the thermal treatment chamber 1010 from a transfersystem (not shown). Although the opening 1014 is illustrated as part ofthe thermal treatment chamber 1010 (consistent with FIG. 1), thetransfer opening 1014 can be formed in the chemical treatment chamber510 and not the thermal treatment chamber 1010 (reverse chamberpositions as shown in FIG. 1), or the transfer opening 1014 can beformed in both the chemical treatment chamber 510 and the thermaltreatment chamber 1010.

As illustrated in FIG. 5, the chemical treatment system 500 comprisestemperature controlled substrate holder 540 to provide severaloperational functions for thermally controlling and processingsubstrates 545. The substrate holder 540 comprises one or moretemperature control elements configured to adjust and/or elevate atemperature of the plurality of substrates 545.

The one or more temperature control elements may be configured to heatand/or cool substrates 545. For example, the temperature-controlledsubstrate holder 540 may include a cooling system having are-circulating flow of a heat transfer fluid that receives heat fromsubstrate holder 540 and transfers heat to a heat exchanger system (notshown), or alternatively, a heating system having a re-circulating flowof a heat transfer fluid that receives heat from a heat exchanger (notshown and transfers heat to substrate holder 540. In other embodiments,the temperature control elements may include resistive heating elements,or thermo-electric heaters/coolers. These temperature control elementsmay be utilized for controlling the temperature of the substrate holder540, a chamber wall of chemical treatment chamber 510, and upperassembly 520.

According to one embodiment, FIG. 6 presents several views of asubstrate holder for performing several of the above-identifiedfunctions. In FIG. 6, an exploded, cross-sectional view oftemperature-controlled substrate holder 540 depicted in FIG. 5 is shown.The substrate holder 540 comprises a temperature-controlled substratetable 542 having an upper surface configured to support two or moresubstrates, a lower surface opposite the upper surface, and an edgesurface, a chamber mating component 612 coupled to the lower surface ofthe temperature-controlled substrate table 542, and an insulatingcomponent 614 disposed between a bottom of chamber mating component 612and a lower chamber wall 610 of chemical treatment chamber 510. Thechamber mating component 612 may include two or more support columns 613configured to support the temperature-controlled substrate table 542 ata distance from the lower chamber wall 610 of the chemical treatmentchamber 510, wherein each of the two or more support columns 613comprises a first end coupled to a lower surface of thetemperature-controlled substrate table 542 and a second end coupled tothe lower chamber wall 610 of the chemical treatment chamber 510.

The temperature-controlled substrate table 542 and the chamber matingcomponent 612 may, for example, be fabricated from an electrically andthermally conducting material such as aluminum, stainless steel, nickel,etc. The insulating component 614 can, for example, be fabricated from athermally-resistant material having a relatively lower thermalconductivity such as quartz, alumina, Teflon, etc.

The temperature-controlled substrate table 542 may comprise temperaturecontrol elements such as cooling channels, heating channels, resistiveheating elements, or thermo-electric elements. For example, asillustrated in FIG. 6, the temperature-controlled substrate table 542comprises a fluid channel 544 formed within an interior of thetemperature-controlled substrate table 542. The fluid channel 544comprises an inlet fluid conduit 546 and an outlet fluid conduit 548.

A substrate holder temperature control system 560 comprises a fluidthermal unit constructed and arranged to control a temperature of a heattransfer fluid. The fluid thermal unit may comprise a fluid storagetank, a pump, a heater, a cooler, and a fluid temperature sensor. Forexample, the substrate holder temperature control system 560 facilitatesthe supply of an inlet flow 562 of the heat transfer fluid and theexhaust of an outlet flow 564 of the heat transfer fluid using the fluidthermal unit. The substrate holder temperature control system 560further comprises a controller coupled to the fluid thermal unit, andconfigured to perform at least one of monitoring, adjusting orcontrolling the temperature of the heat transfer fluid.

For example, the substrate holder temperature control system 560 mayreceive a temperature measurement from a temperature sensor coupled tothe temperature-controlled substrate table 542, and configured tomeasure a substrate holder temperature. Additionally, for example, thesubstrate holder temperature control system 560 may compare thesubstrate holder temperature to a target substrate holder temperature,and then utilize the controller to adjust the temperature of the heattransfer fluid, or a flow rate of the heat transfer fluid, or acombination thereof to reduce a difference between the substrate holdertemperature and the target substrate holder temperature.

Further yet, for example, the substrate holder temperature controlsystem 560 may receive a plurality of temperature measurements from aplurality of temperature sensors coupled to the temperature-controlledsubstrate table 542, and may utilize the controller to perform at leastone of monitoring, adjusting or controlling the plurality of substrateholder temperatures to alter a temperature uniformity of thetemperature-controlled substrate table 542.

The fluid channel 544 may, for example, be a spiral or serpentinepassage within the temperature-controlled substrate table 542 thatpermits a flow rate of fluid, such as water, Fluorinert, Galden HT-135,etc., in order to provide conductive-convective heating or cooling ofthe temperature-controlled substrate table 542. Alternately, thetemperature-controlled substrate table 542 may comprise an array ofthermo-electric elements capable of heating or cooling a substratedepending upon the direction of electrical current flow through therespective elements. An exemplary thermo-electric element is onecommercially available from Advanced Thermoelectric, ModelST-127-1.4-8.5M (a 40 mm by 40 mm by 3.4 mm thermo-electric devicecapable of a maximum heat transfer power of 72 W).

Although a single fluid channel 544 is shown, the temperature-controlledsubstrate table 542 may include one or more additional fluid channelsformed within the interior of the temperature-controlled substrate table542, wherein each of the one or more additional fluid channels has anadditional inlet end and an additional outlet end, and wherein each ofthe additional inlet ends and each of the additional outlet ends areconfigured to receive and return additional heat transfer fluid throughthe two or more support columns 613.

The insulating component 614 may further comprise a thermal insulationgap in order to provide additional thermal insulation between thetemperature-controlled substrate table 542 and the chemical treatmentchamber 510. The thermal insulation gap may be evacuated using a pumpingsystem (not shown) or a vacuum line as part of vacuum pumping system580, and/or coupled to a gas supply (not shown) in order to vary itsthermal conductivity. The gas supply can, for example, be a backside gassupply utilized to couple heat transfer gas to the back-side of thesubstrates 545.

Each component 542, 612, and 614 further comprises fastening devices(such as bolts and tapped holes) in order to affix one component toanother, and to affix the temperature-controlled substrate holder 540 tothe chemical treatment chamber 510. Furthermore, each component 542,612, and 614 facilitates the passage of the above-described utilities tothe respective component, and vacuum seals, such as elastomer O-rings,are utilized where necessary to preserve the vacuum integrity of thechemical treatment chamber 510.

Additionally, the temperature-controlled substrate holder 540 maycomprise an electrostatic clamping system (not shown) (or mechanicalclamping system) in order to electrically (or mechanically) clampsubstrates 545 to the temperature controlled substrate holder 540. Anelectrostatic clamp (ESC) may comprise a ceramic layer, a clampingelectrode embedded therein, and a high-voltage (HV) direct-current (DC)voltage supply coupled to the clamping electrode using an electricalconnection. The ESC may, for example, be mono-polar, or bi-polar. Thedesign and implementation of such a clamp is well known to those skilledin the art of electrostatic clamping systems.

Furthermore, the temperature-controlled substrate holder 540 maycomprise a back-side gas supply system (not shown) for supplying a heattransfer gas. The heat transfer gas may, for example, be delivered tothe back-side of substrates 545 to improve the gas-gap thermalconductance between substrates 545 and temperature-controlled substrateholder 540. For instance, the heat transfer gas supplied to theback-side of substrates 545 may comprise an inert gas such as helium,argon, xenon, krypton, a process gas, or other gas such as oxygen,nitrogen, or hydrogen. Such a system can be utilized when temperaturecontrol of the substrates is required at elevated or reducedtemperatures. For example, the backside gas system can comprise amulti-zone gas distribution system such as a two-zone (center-edge)system, wherein the back-side gas gap pressure can be independentlyvaried between the center and the edge of substrates 545.

Further yet, the temperature-controlled substrate holder 540 maycomprise a lift-pin assembly 570 comprising a first array of lift pins576 configured to lift a first substrate to and from an upper surface ofthe temperature-controlled substrate table 542, and a second array oflift pins 576 configured to lift a second substrate to and from theupper surface of the temperature-controlled substrate table 542.

As shown in FIG. 6, the lift-pin assembly 570 comprises a lift pinsupport member 574, and a drive system 572 coupled through lower chamberwall 610 via feed-through 616 in the chemical treatment chamber 510, andconfigured to translate the lift pin support member 574 such that thefirst array of lift pins 576 translate through a first array of lift pinholes and the second array of lift pins 576 translate through a secondarray of lift pin holes.

A temperature of the temperature-controlled substrate holder 540 can bemonitored using a temperature sensing device, such as a thermocouple(e.g. a K-type thermocouple, Pt sensor, etc.). Furthermore, thesubstrate holder temperature control system 560 may utilize thetemperature measurement as feedback to the substrate holder 540 in orderto control the temperature of substrate holder 540. For example, atleast one of a fluid flow rate, a fluid temperature, a heat transfer gastype, a heat transfer gas pressure, a clamping force, a resistive heaterelement current or voltage, a thermoelectric device current or polarity,etc. may be adjusted in order to affect a change in the temperature ofsubstrate holder 540 and/or the temperature of the substrates 545.

Referring now to FIGS. 7A and 7B, a top view and side view of asubstrate holder is shown according to another embodiment. As shown inFIG. 7A, substrate holder 740 comprises a temperature-controlledsubstrate table 742 having a contiguous upper surface 760 configured tosupport two substrates 745 and 745′, a lower surface 762 opposite theupper surface 760, and an edge surface 764. The temperature-controlledsubstrate table 742 is further configured to adjust and/or control atemperature of the two substrates 745 and 745′. The substrate holder 740further comprises an inlet fluid conduit 746 and an outlet fluid conduit748 configured to supply and exhaust a flow of heat transfer fluidthrough fluid channel 744.

As shown in FIG. 7A, the inlet fluid conduit 746 is formed through oneof the two or more support columns, wherein the inlet fluid conduit 746is configured to receive the heat transfer fluid from the fluid thermalunit and supply the heat transfer fluid to an inlet end of the fluidchannel 744. Furthermore, the outlet fluid conduit 748 is formed throughanother of the two or more support columns, wherein the outlet fluidconduit 748 is configured to receive the heat transfer fluid from anoutlet end of the fluid channel 744. The temperature-controlledsubstrate table 742 may comprise an upper section 741 and a lowersection 743, wherein the fluid channel 744 is formed in the uppersection 741 or the lower section 743 or both prior to combining the twosections. The upper section 741 and the lower section 743 may becombined by fastening the two sections to one another with a sealdisposed there-between, or by welding the two sections together.

The fluid channel 744 may have a serpentine shape; however, the shape ofthe fluid channel may be arbitrary. For example, FIG. 7D illustrates asubstrate holder 740′ having a fluid channel 744′ having a moreconvoluted path.

Referring to FIG. 7C, a top view of the temperature-controlled substratetable 742 is provided to illustrate an exemplary spatial relationship ofthe temperature-controlled substrate holder 742 relative to a chamberwall 720 and a vacuum pumping port 780 in the lower wall of the chemicaltreatment chamber. The temperature-controlled substrate holder 742 isshaped in a manner to improve flow conductance through the chemicaltreatment chamber to the vacuum pumping port 780.

Referring to FIGS. 7A, 7B, 7D, 8A, and 8B, the substrate holder 740 mayfurther comprise a lift-pin assembly comprising a first array of threelift pin holes 750 configured to allow passage of a first array of liftpins 751 through the temperature-controlled substrate table 742 to liftthe first substrate 745 to and from the upper surface 760 of thetemperature-controlled substrate table 742, and a second array of threelift pin holes 750′ configured to allow passage of a second array oflift pins 751′ through the temperature-controlled substrate table 742 tolift a second substrate 745′ to and from the upper surface 760 of thetemperature-controlled substrate table 742.

As shown in FIGS. 8A and 8B, the lift-pin assembly comprises a lift pinsupport member 752, and a drive system that includes a piston member 754coupled through a wall 710 in the chemical treatment chamber 510, andconfigured to translate the lift pin support member 752 such that thefirst array of lift pins 751 translate through the first array of liftpin holes 750 and the second array of lift pins 751′ translate throughthe second array of lift pin holes 750′. The first array of lift pins751 is configured to align and pass through the first array of lift pinholes 750, wherein each lift pin in the first array of lift pins 751comprises a first contact end configured to contact the first substrateand a first support end coupled to the lift pin support member 752. Thesecond array of lift pins 751′ are configured to align and pass throughthe second array of lift pin holes 750′, wherein each lift pin in thesecond array of lift pins 751′ comprises a second contact end configuredto contact the second substrate and a second support end coupled to thelift pin support member 752. The piston member 754 is coupled to thelift pin support member 752 and is configured to vertically translatethe lift pin support member 752 by sliding through a feed-through inwall 710.

As illustrated in FIG. 8C, each lift pin hole in the first array of liftpin holes 750 and the second array of lift pins 751′ may comprise aninsert 749 having a flared end with a flared dimension 747 greater thana nominal dimension 747′ of the lift-pin hole. The use of insert 749 mayassist in the alignment of the first array of lift pins 751 with thefirst array of lift pin holes 750 and the second array of lift pins 751′with the second array of lift pin holes 750′ during assembly of thesubstrate holder 740 (before, during, or after maintenance).

Furthermore, as shown in FIG. 8B, the temperature-controlled substratetable 742 may optionally comprise a skirt 790 coupled the lower surface762 and/or edge surface 764. The skirt 790 may aid in reducing theamount of contamination and process residue that is deposited on theunderside of the temperature-controlled substrate table 742 and thelift-pin assembly. Furthermore, the skirt 790 may aid in reducing theamount of gettering of process reactants by the underside of thetemperature-controlled substrate table 742 (i.e., lower surface 762) andthe lift-pin assembly.

As described above, the upper assembly 520 comprises gas injectionassembly 550 coupled to the chemical treatment chamber 510, andconfigured to introduce one or more process gases to a process space512, and heater assembly 530 coupled to the gas injection assembly 550and configured to elevate a temperature of the gas injection assembly550.

The gas injection assembly 550 may comprise a showerhead gas injectionsystem having a gas distribution assembly, and one or more gasdistribution plates coupled to the gas distribution assembly andconfigured to form one or more gas distribution plenums. Although notshown, the one or more gas distribution plenums may comprise one or moregas distribution baffle plates. The one or more gas distribution platesfurther comprise one or more gas distribution orifices to distribute aprocess gas from the one or more gas distribution plenums to the processspace 512 within chemical treatment chamber 510. Additionally, one ormore gas supply lines may be coupled to the one or more gas distributionplenums through, for example, the gas distribution assembly in order tosupply a process gas comprising one or more gases. The process gas can,for example, comprise NH₃, HF, H₂, O₂, CO, CO₂, Ar, He, etc.

As shown in FIG. 5, the gas injection assembly 550 may be configured fordistributing a process gas comprising at least two gases into chemicaltreatment chamber 510. The gas injection assembly 550 may comprise afirst array of orifices 552 for introducing a first process gas from agas supply system 556, and a second array of orifices 554 forintroducing a second process gas from the gas supply system 556. Forexample, the first process gas may contain HF, and the second processgas may contain NH₃ and optionally Ar.

As shown in FIG. 9 (expanded view of FIG. 5 with additional detail), anupper assembly 820 comprises a gas injection assembly 850, and a heaterassembly 830 coupled to the gas injection assembly 850 and configured toelevate a temperature of the gas injection assembly 850. The gasinjection assembly 850 is configured to distribute a process gascomprising at least two gases. The gas injection assembly 850 comprisesa gas distribution assembly having a first gas distribution plenum 856configured to introduce a first process gas to process space 812 througha first array of orifices 852, and a second gas distribution plenum 858configured to introduce a second process gas to process space 812through a second array of orifices 854. The first gas distributionplenum 856 is configured to receive the first process gas from a gassupply system 870 through a first passage 855, and the second gasdistribution plenum 858 is configured to receive the second process gasfrom gas supply system 870 through a second passage 857. Although notshown, gas distribution plenums 856, 858 can comprise one or more gasdistribution baffle plates.

The process gas can, for example, comprise NH₃, HF, H₂, O₂, CO, CO₂, Ar,He, etc. As a result of this arrangement, the first process gas and thesecond process gas may be independently introduced to the process space812 without any interaction except in the process space 812.

As shown in FIG. 5, heater assembly 530 is coupled to the gas injectionassembly 550 and configured to elevate a temperature of the gasinjection assembly 550. The heater assembly 530 comprises a plurality ofheating elements 532 and a power source 534 configured to couple powerto the plurality of heating elements.

As shown in FIG. 9, the heater assembly 830 comprises a plurality ofresistive heating elements 831, 832, 833, and 834 coupled to a uppersurface of gas injection assembly 850. The heater assembly furthercomprises a power source 860 coupled to the plurality of resistiveheating elements 831, 832, 833, and 834, and configured to coupleelectrical current to each of the plurality of resistive heatingelements 831, 832, 833, and 834. The power source 860 may comprise adirect current (DC) power source or an alternating current (AC) powersource. Furthermore, the plurality of resistive heating elements 831,832, 833, and 834 may be connected in series or connected in parallel.

Additionally, the heater assembly 830 may further include an insulationmember 836, and a clamp member 838 configured to affix the plurality ofresistive heating elements 831, 832, 833, and 834 to the upper surfaceof the gas injection assembly 850. Furthermore, the heater assembly 830may comprise a heat shield 840, and one or more columns 842 configuredto shield the plurality of resistive heating elements 831, 832, 833, and834 and stand off the heat shield 840 a distance from the upper surfaceof the gas injection assembly 850. Alternatively, insulation may beprovided by heat insulation foam.

Referring now to FIGS. 10A and 10B, a top view and a side view of anupper assembly 920 comprising a heater assembly 930 and a gas injectionassembly 950 are provided according to another embodiment. The upperassembly 920 may comprise a plate member 922 and a lower member 924. Theheater assembly 930 comprises plate member 922 having an upper surface,and a plurality of resistive heating elements 932, 934, 936, and 938coupled to the upper surface of the plate member 922. As shown in FIG.10A, each of the plurality of resistive heating elements 932, 934, 936,and 938 comprises a heating element having a 180 degree major axis bend.For example, each of the plurality of resistive heating elements 932,934, 936, and 938 comprises a first end 933 fixedly coupled to the uppersurface of the plate member 922, a second end 931 configured to becoupled to a power source, a bend located between the first end 933 andthe second end 931, a first straight section extending between the firstend 933 and the bend, and a second straight section extending betweenthe second end 931 and the bend.

The first straight section may be substantially parallel to the secondstraight section for each of the plurality of resistive heating elements932, 934, 936, and 938. Additionally, the first straight section and thesecond straight section of one of the plurality of resistive heatingelements 932, 934, 936, and 938 may be substantially parallel to thefirst straight section and the second straight section of another of theplurality of resistive heating elements. Furthermore, the plurality ofresistive heating elements 932, 934, 936, and 938 may be arranged inpairs on the upper surface of the plate member 922. Further yet, one ormore spacers 940 coupled to the upper surface of the plate member 922may be arranged to position one of the plurality of resistive heatingelements 932, 934, 936, and 938 relative to another of the plurality ofresistive heating elements 932, 934, 936, and 938.

In order to uniformly heat and/or control the temperature profile of thegas distribution system, the plurality of resistive heating elements932, 934, 936, and 938 may be arranged in an interlaced manner whereinat least two of the plurality of resistive heating elements 932, 934,936, and 938 are arranged such that the first end 933 of a first of theat least two of the plurality of resistive heating elements 932, 934,936, and 938 is positioned proximate an interior edge of the bend in asecond of the at least two of the plurality of resistive heatingelements 932, 934, 936, and 938.

The plurality of resistive heating elements 932, 934, 936, and 938 may,for example, comprise a resistive heater element fabricated fromtungsten, nickel-chromium alloy, aluminum-iron alloy, aluminum nitride,etc. Examples of commercially available materials to fabricate resistiveheating elements include Kanthal, Nikrothal, Akrothal, which areregistered trademark names for metal alloys produced by KanthalCorporation of Bethel, Conn. The Kanthal family includes ferritic alloys(FeCrAl) and the Nikrothal family includes austenitic alloys (NiCr,NiCrFe). According to one example, each of the plurality of resistiveheating elements 932, 934, 936, and 938 may comprise a Watlow FIREBAR®heating element, commercially available from Watlow ElectricManufacturing Company (12001 Lackland Road, St. Louis, Mo. 63146).Alternatively, or in addition, cooling elements can be employed in anyof the embodiments.

As described above, the upper assembly 920 further comprises a powersource configured to couple electrical power to the plurality ofresistive heating elements 932, 934, 936, and 938. The power source maycomprise a direct current (DC) power source or an alternating current(AC) power source. The plurality of resistive heating elements 932, 934,936, and 938 may be connected in series or connected in parallel.Additionally, a temperature sensor 960 may be coupled to the gasinjection assembly 950 and configured to measure a temperature of thegas injection assembly 950. The temperature sensor 960 may comprise athermocouple (e.g. a K-type thermocouple, Pt sensor, etc.). A controllermay be coupled to the heater assembly 930 and the temperature sensor960, and configured to perform at least one of monitoring, adjusting, orcontrolling said temperature of the gas injection assembly 950. Forexample, at least one of a voltage, a current, a power, etc. may beadjusted in order to affect a change in the temperature of the gasinjection assembly 950 and/or the upper assembly 920. Further yet, aplurality of temperature sensors may be utilized to monitor, adjust,and/or control a temperature distribution for the gas injection assembly950 and/or the upper assembly 920.

Referring again to FIG. 5, chemical treatment system 500 may furthercomprise a temperature-controlled chemical treatment chamber 510 that ismaintained at an elevated temperature. For example, a wall heatingelement (not shown) may be coupled to a wall temperature control unit(not shown), and the wall heating element may be configured to becoupled to the chemical treatment chamber 510. The heating element can,for example, comprise a resistive heater element such as a tungsten,nickel-chromium alloy, aluminum-iron alloy, aluminum nitride, etc.,filament. Examples of commercially available materials to fabricateresistive heating elements include Kanthal, Nikrothal, Akrothal, whichare registered trademark names for metal alloys produced by KanthalCorporation of Bethel, Conn. The Kanthal family includes ferritic alloys(FeCrAl) and the Nikrothal family includes austenitic alloys (NiCr,NiCrFe). When an electrical current flows through the filament, power isdissipated as heat, and, therefore the wall temperature control unitmay, for example, comprise a controllable DC power supply. For example,wall heating element can comprise at least one FIREROD® cartridge heatercommercially available from Watlow Electric Manufacturing Company (12001Lackland Road, St. Louis, Mo. 63146). A cooling element can also beemployed in chemical treatment chamber 510. The temperature of thechemical treatment chamber 510 can be monitored using atemperature-sensing device such as a thermocouple (e.g. a K-typethermocouple, Pt sensor, etc.). Furthermore, a controller can utilizethe temperature measurement as feedback to the wall temperature controlunit in order to control the temperature of the chemical treatmentchamber 510.

Referring still to FIG. 5, vacuum pumping system 580 can comprise avacuum pump and a gate valve for throttling the chamber pressure. Thevacuum pump can, for example, include a turbo-molecular vacuum pump(TMP) capable of a pumping speed up to about 5000 liters per second (andgreater). For example, the TMP can be a Seiko STP-A803 vacuum pump, oran Ebara ET1301W vacuum pump. TMPs are useful for low pressureprocessing, typically less than about 50 mTorr. For high pressure (i.e.,greater than about 100 mTorr) or low throughput processing (i.e., no gasflow), a mechanical booster pump and dry roughing pump can be used.

Referring still to FIG. 5, chemical treatment system 500 can furthercomprise a control system 590 having a microprocessor, memory, and adigital I/O port capable of generating control voltages sufficient tocommunicate and activate inputs to chemical treatment system 500 as wellas monitor outputs from chemical treatment system 500 such astemperature and pressure sensing devices. Moreover, control system 590can be coupled to and can exchange information with chemical treatmentchamber 510, temperature-controlled substrate holder 540, upper assembly520, heater assembly 530, gas injection assembly 550, vacuum pumpingsystem 580, substrate holder temperature control system 560, lift-pinassembly 570, and gate valve assembly 518. For example, a program storedin the memory can be utilized to activate the inputs to theaforementioned components of chemical treatment system 500 according toa process recipe.

Control system 590 may be locally located relative to the chemicaltreatment system 500, or it may be remotely located relative to thechemical treatment system 500 via an internet or intranet. Thus, controlsystem 590 can exchange data with the chemical treatment system 500using at least one of a direct connection, an intranet, or the internet.Control system 590 may be coupled to an intranet at a customer site(i.e., a device maker, etc.), or coupled to an intranet at a vendor site(i.e., an equipment manufacturer). Furthermore, another computer (i.e.,controller, server, etc.) can access control system 590 to exchange datavia at least one of a direct connection, an intranet, or the internet.

As illustrated in FIG. 11A, the thermal treatment system 1000 furthercomprises a substrate holder 1040 mounted within the thermal treatmentchamber 1010 and configured to support two or more substrates 1045 on asupport surface thereof, an upper assembly 1020 coupled to an uppersection of the thermal treatment chamber 1010, and a vacuum pumpingsystem 1080 coupled to the thermal treatment chamber 1010 to evacuatethe thermal treatment chamber 1010.

Substrate holder 1040 comprises a temperature-controlled substrateholder having one or more pedestals 1042 configured to support two ormore substrates 1045. The one or more pedestals 1042 may be thermallyinsulated from the thermal treatment chamber 1010 using a thermalbarrier 1044 and insulation member 1046. For example, the one or morepedestals 1042 may be fabricated from aluminum, stainless steel, ornickel, and the insulation member 1046 may be fabricated from a thermalinsulator such as Teflon, alumina, or quartz. Furthermore, the one ormore pedestals 1042 may be coated with a protective barrier to reducecontamination of the two or more substrates 1045. For example, thecoating applied to part or all of the one or more pedestals 1042 mayinclude a vapor-deposited material, such as silicon.

The substrate holder 1040 further comprises one or more heating elementsembedded therein and a substrate holder temperature control unit 1060coupled thereto. The heating element can, for example, comprise aresistive heater element such as a tungsten, nickel-chromium alloy,aluminum-iron alloy, aluminum nitride, etc., filament. Examples ofcommercially available materials to fabricate resistive heating elementsinclude Kanthal, Nikrothal, and Akrothal, which are registered trademarknames for metal alloys produced by Kanthal Corporation of Bethel, Conn.The Kanthal family includes ferritic alloys (FeCrAl) and the Nikrothalfamily includes austenitic alloys (NiCr, NiCrFe). When an electricalcurrent flows through the filament, power is dissipated as heat, and,therefore, the substrate holder temperature control unit 1060 can, forexample, comprise a controllable DC power supply. Alternately, thetemperature-controlled substrate holder 1040 may, for example, be acast-in heater commercially available from Watlow Electric ManufacturingCompany (12001 Lackland Road, St. Louis, Mo. 63146) capable of a maximumoperating temperature of about 400 to about 450 degrees C., or a filmheater comprising aluminum nitride materials that is also commerciallyavailable from Watlow and capable of operating temperatures as high asabout 300 degrees C. and power densities of up to about 23.25 W/cm².Alternatively, a cooling element can be incorporated in substrate holder1040.

The temperature of the substrate holder 1040 may be monitored using atemperature-sensing device such as a thermocouple (e.g. a K-typethermocouple). Furthermore, a controller can utilize the temperaturemeasurement as feedback to the substrate holder temperature control unit1060 in order to control the temperature of the substrate holder 1040.

Additionally, the substrate temperature can be monitored using atemperature-sensing device such as an optical fiber thermometercommercially available from Advanced Energies, Inc. (1625 Sharp PointDrive, Fort Collins, Co., 80525), Model No. OR2000F capable ofmeasurements from about 50 degrees to about 2000 degrees C. and anaccuracy of about plus or minus 1.5 degrees C., or a band-edgetemperature measurement system as described in pending U.S. patentapplication Ser. No. 10/168,544, filed on Jul. 2, 2002, the contents ofwhich are incorporated herein by reference in their entirety.

Referring still to FIG. 11A, thermal treatment chamber 1010 istemperature-controlled and maintained at a selected temperature. Forexample, a thermal wall heating element (not shown) may be coupled to athermal wall temperature control unit (not shown), and the thermal wallheating element (not shown) may be configured to couple to the thermaltreatment chamber 1010. The heating element may, for example, comprise aresistive heater element such as a tungsten, nickel-chromium alloy,aluminum-iron alloy, aluminum nitride, etc., filament. Examples ofcommercially available materials to fabricate resistive heating elementsinclude Kanthal, Nikrothal, Akrothal, which are registered trademarknames for metal alloys produced by Kanthal Corporation of Bethel, Conn.The Kanthal family includes ferritic alloys (FeCrAl) and the Nikrothalfamily includes austenitic alloys (NiCr, NiCrFe). When an electricalcurrent flows through the filament, power is dissipated as heat, and,therefore, the thermal wall temperature control unit can, for example,comprise a controllable DC power supply. For example, thermal wallheating element can comprise at least one FIREROD® cartridge heatercommercially available from Watlow (1310 Kingsland Dr., Batavia, Ill.,60510). Alternatively, or in addition, cooling elements may be employedin thermal treatment chamber 1010. The temperature of the thermaltreatment chamber 1010 may be monitored using a temperature-sensingdevice such as a thermocouple (e.g. a K-type thermocouple, Pt sensor,etc.). Furthermore, a controller can utilize the temperature measurementas feedback to the thermal wall temperature control unit in order tocontrol a temperature of the thermal treatment chamber 1010.

Referring still to FIG. 11A, thermal treatment system 1000 furthercomprises upper assembly 1020. The upper assembly 1020 can, for example,comprise a gas injection system 1050 for introducing a purge gas,process gas, or cleaning gas to a process space 1012 in the thermaltreatment chamber 1010. Alternately, thermal treatment chamber 1010 maycomprise a gas injection system separate from the upper assembly. Forexample, a purge gas, process gas, or cleaning gas can be introduced tothe thermal treatment chamber 1010 through a side-wall thereof. It canfurther comprise a cover or lid having at least one hinge, a handle, anda clasp for latching the lid in a closed position. In an alternateembodiment, the upper assembly 1020 can comprise a radiant heater suchas an array of tungsten halogen lamps for heating substrates 1045′resting atop blades 1074, 1074′ (see FIG. 12) of substrate lifterassembly 1070. In this case, the substrate holder 1040 may be excludedfrom the thermal treatment chamber 1010.

Referring still to FIG. 11A, the upper assembly 1020 istemperature-controlled and maintained at a selected temperature. Forexample, upper assembly 1020 may be coupled to an upper assemblytemperature control unit (not shown), and the upper assembly heatingelement (not shown) may be configured to be couple to the upper assembly1020. The heating element can, for example, comprise a resistive heaterelement such as a tungsten, nickel-chromium alloy, aluminum-iron alloy,aluminum nitride, etc., filament. Examples of commercially availablematerials to fabricate resistive heating elements include Kanthal,Nikrothal, Akrothal, which are registered trademark names for metalalloys produced by Kanthal Corporation of Bethel, Conn. The Kanthalfamily includes ferritic alloys (FeCrAl) and the Nikrothal familyincludes austenitic alloys (NiCr, NiCrFe). When an electrical currentflows through the filament, power is dissipated as heat, and, therefore,the upper assembly temperature control unit may, for example, comprise acontrollable DC power supply. For example, upper assembly heatingelement can comprise a dual-zone silicone rubber heater (about 1.0 mmthick) capable of about 1400 W (or power density of about 5 W/in²). Thetemperature of the upper assembly 1020 may be monitored using atemperature-sensing device such as a thermocouple (e.g. a K-typethermocouple, Pt sensor, etc.). Furthermore, a controller can utilizethe temperature measurement as feedback to the upper assemblytemperature control unit in order to control the temperature of theupper assembly 1020. Upper assembly 1020 may additionally oralternatively include a cooling element.

Referring now to FIGS. 11A, 11B and 12, thermal treatment system 1000further comprises a substrate lifter assembly 1070. The substrate lifterassembly 1070 is configured to lower substrates 1045 to an upper surfaceof the pedestals 1042, 1042′, as well as raise substrates 1045′ from anupper surface of the pedestals 1042, 1042′ to a holding plane, or atransfer plane there between. At the transfer plane, substrates 1045′can be exchanged with a transfer system utilized to transfer substratesinto and out of the chemical and thermal treatment chambers 510, 1010.At the holding plane, substrates 1045′ can be cooled while another pairof substrates is exchanged between the transfer system and the chemicaland thermal treatment chambers 510, 1010. As shown in FIG. 12, thesubstrate lifter assembly 1070 comprises a pair of blades 1074, 1074′,each having three or more tabs 1076, 1076′ for receiving substrates1045′. Additionally, the blades 1074, 1074′ are coupled to drive arms1072, 1072′ for coupling the substrate lifter assembly 1070 to thethermal treatment chamber 1010, wherein each drive arm 1072, 1072′ isdriven by drive systems 1078 for permitting vertical translation of theblades 1072, 1072′ within the thermal treatment chamber 1010. The tabs1076, 1076′ are configured to grasp substrates 1045′ in a raisedposition, and to recess within receiving cavities 1077 formed within thepedestals 1042, 1042′ when in a lowered position. The drive systems 1078can, for example, include pneumatic drive systems designed to meetvarious specifications including cylinder stroke length, cylinder strokespeed, position accuracy, non-rotation accuracy, etc., the design ofwhich is known to those skilled in the art of pneumatic drive systemdesign.

Alternatively, as shown in FIGS. 11A, 11B and 13, thermal treatmentsystem 1000 further comprises a substrate lifter assembly 1070′. Thesubstrate lifter assembly 1070′ is configured to lower and raisesubstrates 1045′ to and from the upper surface of contiguous pedestal1042″, as well as raise a substrate 1045′ from an upper surface of thepedestal 1042″ to a holding plane, or a transfer plane there between. Atthe transfer plane, substrates 1045′ can be exchanged with a transfersystem utilized to transfer substrates into and out of the chemical andthermal treatment chambers 510, 1010. At the holding plane, substrates1045′ may be cooled while another pair of substrates is exchangedbetween the transfer system and the chemical and thermal treatmentchambers 510, 1010. As shown in FIG. 13, the substrate lifter assembly1070′ comprises a single blade 1074″ having two sets of three or moretabs 1076″, 1076′″ for receiving substrates 1045′. Additionally, thesingle blade 1074″ is coupled to drive arms 1072″ for coupling thesubstrate lifter assembly 1070′ to the thermal treatment chamber 1010,wherein drive arms 1072″ are driven by a drive system 1078, as describedabove, for permitting vertical translation of the blade 1074″ within thethermal treatment chamber 1010. The tabs 1076″, 1076′″ are configured tograsp substrates 1045′ in a raised position, and to recess withinreceiving cavities formed within the pedestal 1042″ when in a loweredposition. The drive system 1078 can, for example, include pneumaticdrive systems designed to meet various specifications including cylinderstroke length, cylinder stroke speed, position accuracy, non-rotationaccuracy, etc., the design of which is known to those skilled in the artof pneumatic drive system design.

Additionally, as shown in FIG. 11A, the thermal treatment system 1000further comprises a substrate detection system comprising one or moredetectors 1022 in order to identify whether substrates are located inthe holding plane. The substrate detection system can gain opticalaccess through one or more optical windows 1024. The substrate detectionsystem may, for example, comprise a Keyence digital laser sensor.

Referring still to FIG. 11A, thermal treatment system 1000 furthercomprises vacuum pumping system 1080. Vacuum pumping system 1080 can,for example, comprise a vacuum pump, and a throttle valve such as a gatevalve or butterfly valve. The vacuum pump can, for example, include aturbo-molecular vacuum pump (TMP) capable of a pumping speed up to about5000 liters per second (and greater). TMPs are useful for low pressureprocessing, typically less than about 50 mTorr. For high pressureprocessing (i.e., greater than about 100 mTorr), a mechanical boosterpump and dry roughing pump can be used.

Referring still to FIG. 11A, thermal treatment system 1000 can furthercomprise a control system 1090 having a microprocessor, memory, and adigital I/O port capable of generating control voltages sufficient tocommunicate and activate inputs to thermal treatment system 1000 as wellas monitor outputs from thermal treatment system 1000. Moreover, controlsystem 1090 can be coupled to and can exchange information withsubstrate holder temperature control unit 1060, upper assembly 1020, gasinjection system 1050, the substrate detection system, vacuum pumpingsystem 1080, and substrate lifter assembly 1070. For example, a programstored in the memory can be utilized to activate the inputs to theaforementioned components of thermal treatment system 1000 according toa process recipe.

Control system 1090 may be locally located relative to the thermaltreatment system 1000, or it may be remotely located relative to thethermal treatment system 1000 via an internet or intranet. Thus, controlsystem 1090 can exchange data with the thermal treatment system 1000using at least one of a direct connection, an intranet, or the internet.Control system 1090 may be coupled to an intranet at a customer site(i.e., a device maker, etc.), or coupled to an intranet at a vendor site(i.e., an equipment manufacturer). Furthermore, another computer (i.e.,controller, server, etc.) can access control system 1090 to exchangedata via at least one of a direct connection, an intranet, or theinternet.

In an alternate embodiment, control system 590 and control system 1090may be the same control system.

FIG. 14 presents a method of operating a processing platform comprisinga chemical treatment system and a thermal treatment system. The methodis illustrated as a flowchart 1400 beginning with step 1410 wherein aplurality of substrates are transferred to the chemical treatment systemusing the substrate transfer system. The substrates are received by liftpins that are housed within one or more substrate holders, and thesubstrates are lowered to the one or more substrate holders. Thereafter,the substrates may rest on the one or more substrate holders forprocessing. Alternatively, the substrates may be secured to the one ormore substrate holders using a clamping system, such as an electrostaticclamping system, and a heat transfer gas is supplied to the backside ofthe substrates.

In step 1420, one or more process parameters for chemical treatment ofthe substrates are set. For example, the one or more chemical processingparameters comprise at least one of a chemical treatment processingpressure, a chemical treatment wall temperature, a chemical treatmentsubstrate holder temperature, a chemical treatment substratetemperature, a chemical treatment gas distribution system temperature,and a chemical treatment gas flow rate. For example, one or more of thefollowing may occur: 1) a controller coupled to a wall temperaturecontrol unit and a first temperature-sensing device is utilized to set achemical treatment chamber temperature for the chemical treatmentchamber; 2) a controller coupled to a gas distribution systemtemperature control unit and a second temperature-sensing device isutilized to set a chemical treatment gas distribution system temperaturefor the chemical treatment chamber; 3) a controller coupled to at leastone temperature control element and a third temperature-sensing deviceis utilized to set a chemical treatment substrate holder temperature; 4)a controller coupled to at least one of a temperature control element, abackside gas supply system, and a clamping system, and a fourthtemperature sensing device in the substrate holder is utilized to set achemical treatment substrate temperature; 5) a controller coupled to atleast one of a vacuum pumping system, and a gas distribution system, anda pressure-sensing device is utilized to set a processing pressurewithin the chemical treatment chamber; and/or 6) the mass flow rates ofthe one or more process gases are set by a controller coupled to the oneor more mass flow controllers within the gas distribution system.

In step 1430, the substrates are chemically treated under the conditionsset forth in step 1420 for a first period of time. The first period oftime can range from about 10 to about 480 seconds, for example.

In step 1440, the substrates are transferred from the chemical treatmentsystem to the thermal treatment system. During which time, the optionalsubstrate clamp is removed, and the optional flow of heat transfer gasto the backside of the substrates is terminated. The substrates arevertically lifted from the one or more substrate holders to the transferplane using a lift pin assembly. The transfer system receives thesubstrates from the lift pins and positions the substrates within thethermal treatment system. Therein, the substrate lifter assemblyreceives the substrates from the transfer system, and lowers thesubstrates to the substrate holder.

In step 1450, one or more thermal process parameters for thermaltreatment of the substrates are set. For example, the one or morethermal processing parameters comprise at least one of a thermaltreatment wall temperature, a thermal treatment upper assemblytemperature, a thermal treatment substrate temperature, a thermaltreatment substrate holder temperature, a thermal treatment substratetemperature, and a thermal treatment processing pressure. For example,one or more of the following may occur: 1) a controller coupled to athermal wall temperature control unit and a first temperature-sensingdevice in the thermal treatment chamber is utilized to set a thermaltreatment wall temperature; 2) a controller coupled to an upper assemblytemperature control unit and a second temperature-sensing device in theupper assembly is utilized to set a thermal treatment upper assemblytemperature; 3) a controller coupled to a substrate holder temperaturecontrol unit and a third temperature-sensing device in the heatedsubstrate holder is utilized to set a thermal treatment substrate holdertemperature; 4) a controller coupled to a substrate holder temperaturecontrol unit and a fourth temperature-sensing device in the heatedsubstrate holder and coupled to the substrate is utilized to set athermal treatment substrate temperature; and/or 5) a controller coupledto a vacuum pumping system, a gas distribution system, and a pressuresensing device is utilized to set a thermal treatment processingpressure within the thermal treatment chamber.

In step 1460, the substrate is thermally treated under the conditionsset forth in step 1450 for a second period of time. The second period oftime can range from 10 to 480 seconds, for example.

In an example, the processing platform, as depicted in FIGS. 1 through4, including the chemical treatment system of FIG. 5 and the thermaltreatment system of FIGS. 11A and 11B, may be configured to perform adry, non-plasma etching process or a dry, non-plasma cleaning process.For example, the process may be used to trim a mask layer, or removeresidue and other contaminants from surfaces of a substrate.Furthermore, for example, the process may include a chemical oxideremoval process.

The processing platform comprises a chemical treatment system forchemically treating exposed surface layers, such as oxide surfacelayers, on a substrate, whereby adsorption of the process chemistry onthe exposed surfaces affects chemical alteration of the surface layers.Additionally, the processing platform comprises thermal treatment systemfor thermally treating the substrate, whereby the substrate temperatureis elevated in order to desorb (or evaporate) the chemically alteredexposed surface layers on the substrate.

In the chemical treatment system, the process space may be operated atabove-atmosphere, at atmospheric, or under reduced-pressure conditions.In the following example, the process space is operated underreduced-pressure conditions. A process gas comprising HF and optionallyNH₃ is introduced. Alternately, the process gas can further comprise acarrier gas. The carrier gas can, for example, comprise an inert gassuch as argon, xenon, helium, etc. The processing pressure may rangefrom about 1 to about 1000 mTorr. Alternatively, the processing pressurecan range from about 10 to about 500 mTorr. The process gas flow ratesmay range from about 1 to about 10000 sccm for each gas specie.Alternatively, the flow rates can range from about 10 to about 500 sccm.

Additionally, the chemical treatment chamber can be heated to atemperature ranging from about 10 degrees C. to about 200 degrees C.Alternatively, the chamber temperature can range from about 30 degreesC. to about 100 degrees C. Additionally, the gas distribution system canbe heated to a temperature ranging from about 10 degrees C. to about 200degrees C. Alternatively, the gas distribution system temperature canrange from about 30 degrees C. to about 100 degrees C. The substrate canbe maintained at a temperature ranging from about 10 degrees C. to about80 degrees C. Alternatively, the substrate temperature can range formabout 25 degrees C. to about 60 degrees C.

In the thermal treatment system, the thermal treatment chamber can beheated to a temperature ranging from about 20 degrees C. to about 200degrees C. Alternatively, the chamber temperature can range from about100 degrees C. to about 150 degrees C. Additionally, the upper assemblycan be heated to a temperature ranging from about 20 degrees C. to about200 degrees C. Alternatively, the upper assembly temperature can rangefrom about 100 degrees C. to about 150 degrees C. The substrate holdercan be heated to a temperature in excess of about 100 degrees C., forexample, from about 100 degrees C. to about 200 degrees C. The substratecan be heated to a temperature in excess of about 100 degrees C., forexample, from about 100 degrees C. to about 200 degrees C.

According to another embodiment, one or more surfaces of the componentscomprising the chemical treatment chamber 510 (FIG. 5) and the thermaltreatment chamber 1010 (FIGS. 11A and 11B) can be coated with aprotective barrier. The protective barrier may comprise a ceramiccoating, a plastic coating, a polymeric coating, a vapor depositedcoating, etc. For example, the protective barrier may comprise polyimide(e.g., Kapton®), polytetrafluoroethylene resin (e.g., Teflon® PTFE),polyfluoroalkoxy (PFA) copolymer resin (e.g., Teflon® PFA), fluorinatedethylene propylene resin (e.g., Teflon® FEP), a surface anodizationlayer, a ceramic spray coating (such as alumina, yttria, etc.), a plasmaelectrolytic oxidation layer, etc.

Referring now to FIG. 15, a chemical oxide removal process is performed,wherein a process gas comprising HF and NH₃ is introduced to a chemicaltreatment system for chemically altering the surface layers of a SiO₂film. Thereafter, the chemically modified surface layers of the SiO₂film are removed in a thermal treatment system. As shown in FIG. 15, anetch amount (nm) of the SiO₂ film is provided as a function of HFpartial pressure (mtorr) for a given set of process conditions (i.e.,pressure, temperature, etc). For a first set of data (dashed line, opensquares), the surfaces exposed to the chemical process in the chemicaltreatment system comprise bare aluminum. For a second set of data (solidline, crosses) using the same process conditions as the first set ofdata, one or more surfaces exposed to the chemical process in thechemical treatment system comprise a coating containing PTFE appliedthereto. In this example, the PTFE is applied to the underside of thesubstrate holder in the chemical treatment system. As depicted in FIG.15, the application of a coating to one or more bare aluminum surfacesexposed to the chemical process causes an increase in the etch amount.It is suspected that the coating reduces gettering of the HF reactantand, hence, reduces the amount of HF consumed by exposed aluminumsurfaces in the formation of NH₄F on these surfaces.

Referring to FIG. 16, a method of increasing a dry, non-plasma etch rateis provided according to an embodiment. The method is illustrated as aflowchart 1600 beginning in step 1610 with performing a chemicaltreatment process in a chemical treatment system. The chemical treatmentprocess may comprise a dry, non-plasma chemical oxide removal process,wherein one or more substrates are exposed to a gaseous environmentcontaining HF and optionally NH₃. The gaseous environment may furthercomprise a diluent, such as a noble gas.

In 1620, a thermal treatment process is performed in a thermal treatmentsystem. The thermal treatment process may include elevating atemperature of the one or more substrates to remove the surface layerschemically modified in the chemical treatment process.

In 1630, a coating is applied to one or more surfaces in the chemicaltreatment chamber to increase the etch amount achieved for each set ofchemical treatment process and thermal treatment process steps. Thecoating may include any one of the materials described above. Thecoating may prevent or reduce the sorption of ammonium fluoride (NH₄F)onto internal surfaces of the chemical treatment system. The internalsurfaces of the chemical treatment system may include the chemicaltreatment chamber, the temperature-controlled substrate holder, or thegas injection assembly, or any combination thereof.

Although only certain embodiments of this invention have been describedin detail above, those skilled in the art will readily appreciate thatmany modifications are possible in the embodiments without materiallydeparting from the novel teachings and advantages of this invention.Accordingly, all such modifications are intended to be included withinthe scope of this invention.

1. A method of operating a processing system to treat a substrate,comprising: transferring two or more substrates into a chemicaltreatment system comprising a chemical treatment chamber, a temperaturecontrolled substrate holder mounted within said chemical treatmentchamber and configured to support two or more substrates on a supportsurface thereof, a gas injection assembly coupled to said chemicaltreatment chamber and configured to introduce one or more process gasesto a process space in said chemical treatment chamber in order tochemically alter exposed surface layers on said two or more substrates,a heater assembly coupled to said gas injection assembly and configuredto elevate a temperature of said gas injection assembly, a vacuumpumping system, and a controller coupled to said thermal treatmentsystem; setting chemical processing parameters for said chemicaltreatment system using said controller, wherein said one or morechemical processing parameters comprise at least one of a chemicaltreatment processing pressure, a chemical treatment chamber temperature,a chemical treatment upper assembly temperature, a flow rate of said oneor more process gases, a chemical treatment substrate temperature, and achemical treatment substrate holder temperature; and processing said twoor more substrates in said chemical treatment system using said chemicalprocessing parameters in order to chemically alter exposed surfacelayers on said two or more substrates.
 2. The method according to claim1, further comprising: transferring said two or more substrates withsaid chemically alter exposed surface layers into a thermal treatmentsystem following said processing in said chemical treatment system, saidthermal treatment system comprising a thermal treatment chamber, one ormore temperature controlled substrate holders mounted within saidthermal treatment chamber, a substrate lifter assembly coupled to saidthermal treatment chamber for vertically translating said two or moresubstrates between a transfer plane and said one or more temperaturecontrolled substrate holders, a vacuum pumping system, and a controllercoupled to said thermal treatment system; setting thermal processingparameters for said thermal treatment system using said controller,wherein said one or more thermal processing parameters comprise at leastone of a thermal treatment processing pressure, a thermal treatmentchamber temperature, a thermal treatment substrate temperature, and athermal treatment substrate holder temperature; and processing saidsubstrate in said thermal treatment system using said thermal processingparameters in order to evaporate said chemically altered exposed surfacelayers on said substrate.